1.Basic memory cell of dynamic RAM

a. Capacitance

b. Flip flop

c. Transistor

d. Transistor with Capacitor

2.Ideal Power Supply has

a. Zero internal resistance

b. High O/P resistance

c. High I/P resistance

d. Low O/P resistance

3.Which type of transmission line will have max. value of characteristic impedence

a. Open Wire line

b. Coaxial Cable

c. Twin lead line

d. None

4. For same peak value of current, which waveform will have least RMS value

a. Sine

b. Square

c. Triangular

d. Full wave rectified wave

5. F-V analogy displacement is analogous to

a. Voltage

b. Condutance

c. Magnetic Flux Linkage

d. Capacitance

Similarly..............In F-I analogy displacement is analogous to

a. Charge

b. Resistance

c. Inductance

d. Current

6. In the following circuit Vo/Vin = (there were 4 options)

7. In the following circuit the charging and discharging time is

(i don’t remember the options)

8.The output at X acts as….

a. OR gate

b. AND gate

c. XOR gate

d. XNOR gate



9.The CRO in X-Y mode gives the following figure. If the signal applied to the

Y-plate is 2sin(wt) then the signal applied to the X-plate is

a. 2 sin (wt) b. 2 sin (wt + p/4) c. 2 sin (wt – p/4) d.2v 2 sin (wt + p/4)